CHE1270 rohs compliant ref. : dsCHE1270-7297 - 24 oct 07 1/6 united monolithic semiconductors s.a.s. route dpartementale 128 - b.p.46 - 91401 orsay cede x france tel. : +33 (0)1 69 33 03 08 - fax : +33 (0)1 69 33 03 09 12-40ghz wide band detector gaas monolithic microwave ic description the CHE1270 is a detector that integrates a matched detection diode (vdet). a reference diode is also available to be used in differential mode (vref). it is designed for a wide range of applications where an accurate transmitted power control is required, typically commercial communication systems. the circuit is manufactured with a schottky diode mmic process, 1m gate length, via holes through the substrate and air bridges. it is available in chip form. main features wide frequency range 12-40ghz 35db dynamic range esd protected chip size: 1.41 x 0.89 x 0.1mm bcb layer protection main characteristics tamb = +25c, vdc = +4.5v symbol parameter min typ max unit f frequency range 12 40 ghz dr dynamic range 35 db rl return loss -10 db esd protection: electrostatic discharge sensitive d evice. observe handling precautions! vdet rf_in dc CHE1270 vref matching transmitted power detection (mv) 1 10 100 1000 10000 -20 -18 -16 -14 -12 -10 -8 -6 -4 -2 0 2 4 6 8 10 12 14 16 18 input power (dbm) vdetect= vref-vdet (mv) 12 ghz 17ghz 22ghz 27ghz 32ghz 37ghz 40ghz
CHE1270 12-40ghz detector ref. : dsCHE1270-7297 - 24 oct 07 2/6 route dpartementale 128 , b.p.46 - 91401 orsay cedex - france tel.: +33 (0)1 69 33 03 08 - fax : +33 (0)1 69 3 3 03 09 electrical characteristics (1) tamb = +25c, vdc = +4.5v symbol parameter min typ max unit f frequency range 12 40 ghz dr dynamic range 35 db ipr input power range ipr_min ipr_max -20 15 dbm dbm vdetect voltage detection vref C vdet from ipr_min to ipr_max 10 to 1800 mv rl return loss (12 C 14.5ghz) return loss (15 C 40ghz) -8 -10 db db vdc bias voltage 4.5 v idc bias current 75 m a (1) these values are representative of on-wafer meas urements that are made without bonding wires at the rf ports but with 27k w resistor in parallel on pads vdet and vref. absolute maximum ratings (1) temp = +25c symbol parameter values unit vdc bias voltage 6 v ipr_max maximum input power 18 dbm top operating temperature range -40 to +85 c tstg storage temperature range -55 to +125 c (1) operation of this device above anyone of these paramaters may cause permanent damage.
12-40ghz detector CHE1270 ref. : dsCHE1270-7297 - 24 oct 07 3/6 route dpartementale 128 , b.p.46 - 91401 orsay cedex - france tel.: +33 (0)1 69 33 03 08 - fax : +33 (0)1 69 3 3 03 09 typical on-wafer measurements results tamb = +25c, vdc = +4.5v, 27k w ww w resistor in parallel on pads vdet and vref return loss versus frequency -26 -24 -22 -20 -18 -16 -14 -12 -10 -8 -6 -4 -2 0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 32 34 36 38 40 42 44 freq (ghz) return loss (db) transmitted power detection versus input power 1 10 100 1000 10000 -20 -18 -16 -14 -12 -10 -8 -6 -4 -2 0 2 4 6 8 10 12 14 16 18 input power (dbm) vdetect= vref-vdet (mv) 12 ghz 17ghz 22ghz 27ghz 32ghz 37ghz 40ghz
CHE1270 12-40ghz detector ref. : dsCHE1270-7297 - 24 oct 07 4/6 route dpartementale 128 , b.p.46 - 91401 orsay cedex - france tel.: +33 (0)1 69 33 03 08 - fax : +33 (0)1 69 3 3 03 09 transmitted power detection versus frequency @ -20d bm input power 5 6 7 8 9 10 11 12 13 14 15 12 14 16 18 20 22 24 26 28 30 32 34 36 38 40 freq (ghz) vdetect= vref-vdet (mv) transmitted power detection versus frequency @ +15d bm input power 1000 1100 1200 1300 1400 1500 1600 1700 1800 1900 2000 12 14 16 18 20 22 24 26 28 30 32 34 36 38 40 freq (ghz) vdetect= vref-vdet (mv)
12-40ghz detector CHE1270 ref. : dsCHE1270-7297 - 24 oct 07 5/6 route dpartementale 128 , b.p.46 - 91401 orsay cedex - france tel.: +33 (0)1 69 33 03 08 - fax : +33 (0)1 69 3 3 03 09 chip assembly and mechanical data dc pads size: 100/100 m, chip thickness: 100 m note: supply feed might be capacitively bypassed. 2 5 m m diameter gold wire is to be prefered. 10nf to vdc supply vdet vref 27k w ww w 27k w ww w 10nf to vdc supply vdet vref 27k w ww w 27k w ww w
CHE1270 12-40ghz detector ref. : dsCHE1270-7297 - 24 oct 07 6/6 route dpartementale 128 , b.p.46 - 91401 orsay cedex - france tel.: +33 (0)1 69 33 03 08 - fax : +33 (0)1 69 3 3 03 09 note resistors in parallel with vdet and vref pads have to be identical. only a 1% variation of this resistor value might be accepted to guarantee a cor rect detection. due to esd protection circuits on rf input, an exte rnal capacitance might be requested to isolate the product from external voltage that coul d be present on the rf access. esd protections are also implemented on vdet and vr ef accesses. ordering information chip form: CHE1270-98f/00 information furnished is believed to be accurate an d reliable. however united monolithic semiconductors s.a.s. assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by impli cation or otherwise under any patent or patent rights of united monolithic semiconductors s.a.s. . specifications mentioned in this publication are subject to change without notice. this publication supersedes and re places all information previously supplied. united monolithic semiconductors s.a.s. products are not authorised for use as critical components in life support devices or s ystems without express written approval from united monolithic semiconductors s.a.s
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